• Media type: E-Article
  • Title: Light-beam-induced current characterization of grain boundaries
  • Contributor: Marek, Jiří
  • imprint: AIP Publishing, 1984
  • Published in: Journal of Applied Physics
  • Language: English
  • DOI: 10.1063/1.333047
  • ISSN: 0021-8979; 1089-7550
  • Origination:
  • Footnote:
  • Description: <jats:p>A quantitative theory for evaluation of light-beam-induced profiles at grain boundaries is presented. Signals and deduced characteristic values, i.e., the maximum and the half-width, are calculated in a practically important region of the semiconductor parameters. From this numerical simulation the influence of the various parameters on the signal properties is deduced. Light beam experiments are performed with high spatial resolution on semicrystalline solar cells. The light-beam-induced current can be calibrated to give the spatially resolved quantum yield. The experimental data are analyzed using the presented theory. Excellent agreement is obtained between experiment and theory as well as between light-beam-induced current analysis and previous electron-induced experiments.</jats:p>