Description:
<jats:p>The deep level transient spectroscopy technique is used on a Ti Schottky diode on n-Si with embedded Ge quantum dots (QDs) obtained by Sb-mediated growth. We discover an electron trap and two hole traps within the Si band gap at the plane of the Ge QDs. The electron trap has an activation energy of 87 ± 7 meV. One hole trap has an activation energy of 304 ± 32 meV, The second hole trap is represented by an energy sub-band between 125 and 250 meV above the top of the Si valence band. The electron level (87 ± 7 meV) and the hole energy sub-band (125–250 meV) are identified as energy levels of the Ge QDs array. The deepest trap level for holes (304 meV) has not been identified yet.</jats:p>