Description:
<jats:p>Surface functionalization of solution processed zinc oxide layers was studied in transistors with bottom-gate bottom-contact configuration aiming at suppression of trapping processes to increase device stability. Saturation of electrically active surface sites and formation of a moisture barrier to decrease the impact of humid atmosphere was successfully shown by binding hexafluoropropylene oxide (HFPO) on the metal oxide semiconductor. Deep trap level related electrical parameters, i.e., stability, hysteresis, and on-set voltage, improved rapidly within 60 s of exposure which was attributed to occupation of sites characterized by low adsorption energies, e.g., at edges. In contrast, shallow trap level related parameters, i.e., mobility, showed a much slower process of improvement. Identical behavior was determined for the contact angle. A physical model is presented by applying first order reaction kinetics equation to Young's law and multiple trapping and release model which relates the dependence of the contact angle and the mobility to the hexafluoropropylene oxide deposition time. Consistent time constants of τ = ≪1 min, 2 min, and 250 min were extracted for mobility and contact angle which implies a direct dependence on the surface coverage. Mobility decreased at short deposition times, recovered at medium deposition times and improved strongly by 2.4 cm2 V−1 s−1 for long deposition times of 1400 min. A microscopic model of these phenomena is given with interpretation of the different time constants found in the experiment.</jats:p>