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Herasimenka, Stanislau Y.; Tracy, Clarence J.; Sharma, Vivek; Vulic, Natasa; Dauksher, William J.; Bowden, Stuart G.

Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity

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  • Media type: E-Article
  • Title: Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity
  • Contributor: Herasimenka, Stanislau Y.; Tracy, Clarence J.; Sharma, Vivek; Vulic, Natasa; Dauksher, William J.; Bowden, Stuart G.
  • imprint: AIP Publishing, 2013
  • Published in: Applied Physics Letters
  • Language: English
  • DOI: 10.1063/1.4827821
  • ISSN: 1077-3118; 0003-6951
  • Keywords: Physics and Astronomy (miscellaneous)
  • Origination:
  • Footnote:
  • Description: <jats:p>The passivation quality of an a-Si/SiO2/SiNx (aSON) stack deposited by conventional PECVD at &amp;lt;250 °C with and without additional corona charging of SiNx is presented. &amp;lt;2 fA/cm2 surface dark saturation current density and &amp;lt;1 cm/s effective surface recombination velocity were demonstrated on both planar and textured n-type Czochralski (CZ) substrates. It was shown that very good passivation can be achieved using &amp;lt;5 nm a-Si layers to provide low parasitic absorption. We also report effective minority carrier lifetimes &amp;gt;60 ms on 5000 Ω-cm and 20.9 ms on 1.7 Ω-cm mirror polished float zone (FZ) material passivated with aSON stacks.</jats:p>