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Media type:
E-Article
Title:
In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)
Contributor:
Supplie, Oliver;
May, Matthias M.;
Kleinschmidt, Peter;
Nägelein, Andreas;
Paszuk, Agnieszka;
Brückner, Sebastian;
Hannappel, Thomas
Published:
AIP Publishing, 2015
Published in:
APL Materials, 3 (2015) 12
Language:
English
DOI:
10.1063/1.4939005
ISSN:
2166-532X
Origination:
Footnote:
Description:
Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study the formation of atomically well-ordered, As-modified Si(100) surfaces and subsequent growth of GaP/Si(100) quasisubstrates in situ with reflection anisotropy spectroscopy. Surface symmetry and chemical composition are measured by low energy electron diffraction and X-ray photoelectron spectroscopy, respectively. A two-step annealing procedure of initially monohydride-terminated, (1 × 2) reconstructed Si(100) in As leads to a predominantly (1 × 2) reconstructed surface. GaP nucleation succeeds analogously to As-free systems and epilayers free of antiphase disorder may be grown subsequently. The GaP sublattice orientation, however, is inverted with respect to GaP growth on monohydride-terminated Si(100).