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Media type:
E-Article
Title:
On reduction of current leakage in GaN by carbon-doping
Contributor:
Fariza, Aqdas;
Lesnik, Andreas;
Bläsing, Jürgen;
Hoffmann, Marc P.;
Hörich, Florian;
Veit, Peter;
Witte, Hartmut;
Dadgar, Armin;
Strittmatter, André
imprint:
AIP Publishing, 2016
Published in:Applied Physics Letters
Language:
English
DOI:
10.1063/1.4968823
ISSN:
0003-6951;
1077-3118
Origination:
Footnote:
Description:
<jats:p>Carbon-doping is proposed to reduce the dislocation-mediated leakage currents in the GaN buffer layers. GaN:C grown by metalorganic vapor phase epitaxy using propane shows excellent quality up to [C] = 6.7 × 1018 cm−3. Locally probing dislocations by surface scanning potential microscopy reveal a transition from mostly neutral or weakly charged regions to dominantly negatively charged regions relative to the surrounding area at high doping levels. A relation between leakage currents and the relative dislocation charge state exists. Minimum leakage current is achieved if the dominant charge state of dislocation regions becomes negative against the surrounding.</jats:p>