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Media type:
E-Article
Title:
Determining the nonparabolicity factor of the CdO conduction band using indium doping and the Drude theory
Contributor:
Mendelsberg, Rueben J;
Zhu, Yuankun;
Anders, André
imprint:
IOP Publishing, 2012
Published in:Journal of Physics D: Applied Physics
Language:
Not determined
DOI:
10.1088/0022-3727/45/42/425302
ISSN:
0022-3727;
1361-6463
Origination:
Footnote:
Description:
<jats:title>Abstract</jats:title>
<jats:p>Due to their high intrinsic electron mobility, CdO-based materials are gaining interest as transparent conductive oxides. By creating model dielectric functions based on the Drude theory, accurate fits to the measured transmittance and reflectance of CdO and CdO : In thin films were achieved without using a frequency dependent Drude damping parameter. Difference in the model between undoped and In-doped CdO showed that the Burstein–Moss shift is not the only mechanism which improves the transparency in In-doped samples. Comparing the Drude analysis with Hall measurements revealed a nonlinear relationship between the free-electron effective mass and the carrier concentration, an effect which is caused by the nonparabolicity of the CdO conduction band. Analysis of 50 CdO : In thin films grown by pulsed filtered cathodic arc showed the nonparabolicity factor was <jats:italic>C</jats:italic> = (0.5 ± 0.2) eV<jats:sup>−1</jats:sup> and the band-edge effective mass was (0.16 ± 0.05)<jats:italic>m</jats:italic>
<jats:sub>e</jats:sub>. Knowledge of the effective mass allows for optical measurements of carrier mobility, which was less than or equal to the measured Hall mobility in these films due to the large electron mean free path compared with the grain size.</jats:p>