• Media type: E-Article
  • Title: Doping process control in silicon epitaxy (II). Calculation of optimum control
  • Contributor: Valkó, P.; Kósza, G.; Richter, F.
  • imprint: Wiley, 1983
  • Published in: Crystal Research and Technology
  • Language: English
  • DOI: 10.1002/crat.2170181219
  • ISSN: 1521-4079; 0232-1300
  • Keywords: Condensed Matter Physics ; General Materials Science ; General Chemistry
  • Origination:
  • Footnote:
  • Description: <jats:title>Abstract</jats:title><jats:p>A procedure is developed to obtain desired dopant profile in epitaxial layer growth. Based an the results of system identification, linear‐quadratic optimal control theory is used to determine the optimal input PH<jats:sub>3</jats:sub> concentration as a function of time. In the performance index an auxiliary weighting coefficient must be incorporated. It is discussed how to select this weighting coefficient.</jats:p>