Description:
<jats:title>Abstract</jats:title><jats:p>Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe<jats:sub>3</jats:sub>)<jats:sub>2</jats:sub>]<jats:sub>3</jats:sub>, and water as precursors in the substrate temperature range of 150–250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO<jats:sub>3</jats:sub> at 225 °C from La[N(SiMe<jats:sub>3</jats:sub>)<jats:sub>2</jats:sub>]<jats:sub>3</jats:sub>, Al(CH<jats:sub>3</jats:sub>)<jats:sub>3</jats:sub>, and H<jats:sub>2</jats:sub>O. The lanthanum β‐diketonate precursor, La(thd)<jats:sub>3</jats:sub>, was used as the reference precursor.</jats:p>