Media type: E-Article Title: Highly efficient class‐F GaN HEMT Doherty amplifier for WCDMA applications Contributor: Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha imprint: Wiley, 2008 Published in: Microwave and Optical Technology Letters Language: English DOI: 10.1002/mop.23700 ISSN: 0895-2477; 1098-2760 Keywords: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Origination: Footnote: Description: <jats:title>Abstract</jats:title><jats:p>This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐carrier WCDMA signal, the CFDA shows the PAE of 44.9% with an ACLR of −22.1 dBc (±2.5 MHz offset) at 36.5 dBm, while an ACLR of −35.4 dBc with the PAE of 39.7% is achieved for the CEDA after linearity optimization. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2328–2331, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23700</jats:p>