Media type: E-Article Title: Experimental analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers for WCDMA applications Contributor: Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha Published: Wiley, 2008 Published in: Microwave and Optical Technology Letters, 50 (2008) 2, Seite 393-396 Language: English DOI: 10.1002/mop.23134 ISSN: 0895-2477; 1098-2760 Keywords: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Origination: Footnote: Description: AbstractComparative analysis of GaN HEMT and Si LDMOS in analog predistortion power amplifiers (PAs) for WCDMA applications is represented. For validation, GaN HEMT and Si LDMOS PAs are designed and implemented with an analog predistorter, and tested for one‐tone and 4‐carrier WCDMA signals at 2.14 GHz. The measured results show that the GaN HEMT PA shows better predistortability and more stable temperature and frequency characteristics compared with the Si LDMOS PA. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 393–396, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23134