Media type: E-Article Title: Linearity‐optimized GaN HEMT Doherty amplifiers using derivative superposition technique for WCDMA applications Contributor: Lee, Yong‐Sub; Lee, Mun‐Woo; Jeong, Yoon‐Ha Published: Wiley, 2008 Published in: Microwave and Optical Technology Letters, 50 (2008) 3, Seite 701-705 Language: English DOI: 10.1002/mop.23181 ISSN: 1098-2760; 0895-2477 Keywords: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Origination: Footnote: Description: AbstractGallium nitride (GaN) high‐electron mobility transistor (HEMT) Doherty amplifiers with the optimized linearity for wide‐band code division multiple access (WCDMA) applications are represented. At a 7‐dB back‐off output power, the measured single‐carrier WCDMA results show two‐way and three‐way GaN HEMT Doherty amplifiers with an adjacent channel leakage ratio (ACLR) of −43.2 and −48.2 dBc at ±2.5 MHz offset frequency with a drain efficiency of 43.1% and 30.9%, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 701–705, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23181