Media type: E-Article Title: A compact, 36 to 72 GHz 15.8 dBm power amplifier with 66.7% fractional bandwidth in 45 nm SOI CMOS Contributor: Tai, Wei; Ricketts, David S. imprint: Wiley, 2014 Published in: Microwave and Optical Technology Letters Language: English DOI: 10.1002/mop.28062 ISSN: 0895-2477; 1098-2760 Keywords: Electrical and Electronic Engineering ; Condensed Matter Physics ; Atomic and Molecular Physics, and Optics ; Electronic, Optical and Magnetic Materials Origination: Footnote: Description: <jats:title>ABSTRACT</jats:title><jats:p>A 36 to 72 GHz wideband power amplifier (PA) in 45‐nm silicon‐on‐insulator CMOS is presented. The PA adopts a two‐stage cascode topology, in which counterposed resonances in the matching networks enable a 3‐dB output power bandwidth of 36 GHz. This bandwidth represents a 66.7% fractional bandwidth—a 1.8X improvement over previously reported CMOS V‐band PAs. At 62 GHz, the PA achieves a peak output power of 15.8 dBm, a gain of 16.9 dB, and 9.4% power‐added efficiency using a 2.2‐V supply. The PA has the largest output power and smallest die area among reported wideband (BW > 30%) millimeter‐wave PAs in CMOS. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:166–169, 2014</jats:p>