Media type: E-Article Title: Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2‐based solar cells with atomic layer deposited Zn(O,S) buffers Contributor: Merdes, Saoussen; Ziem, Florian; Lavrenko, Tetiana; Walter, Thomas; Lauermann, Iver; Klingsporn, Max; Schmidt, Sebastian; Hergert, Frank; Schlatmann, Rutger Published: Wiley, 2015 Published in: Progress in Photovoltaics: Research and Applications, 23 (2015) 11, Seite 1493-1500 Language: English DOI: 10.1002/pip.2579 ISSN: 1062-7995; 1099-159X Keywords: Electrical and Electronic Engineering ; Condensed Matter Physics ; Renewable Energy, Sustainability and the Environment ; Electronic, Optical and Magnetic Materials Origination: Footnote: Description: <jats:title>Abstract</jats:title><jats:p>We report the development of Cd‐free buffers by atomic layer deposition for chalcopyrite‐based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)<jats:sub>2</jats:sub> absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612 mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD‐Zn(O,S)‐buffered devices can be characterized as stable only showing a minor drift of the open circuit voltage and the fill factor. Copyright © 2015 John Wiley & Sons, Ltd.</jats:p>