Description:
<jats:sec><jats:label /><jats:p>ZnGeN<jats:sub>2</jats:sub> as exemplary compound for II‐IV‐N<jats:sub>2</jats:sub> materials allows fascinating insights into this class of materials that can be thought of as earth‐abundant alternative to wurtzite‐type III–V semiconductors. A classical route to achieving ZnGeN<jats:sub>2</jats:sub> is through the ammonolysis reaction of Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> at higher temperatures. Using a combination of X‐ray and neutron powder diffraction together with chemical analyses, a systematic study of the influences of time and temperature on this reaction, yielding in the formation of zinc germanium oxide nitrides in a wurtzite‐type structure with variable elemental compositions is presented. This further allows to identify the underlying reaction mechanism of this ammonolysis reaction.</jats:p></jats:sec>