Media type: E-Article Title: A peculiarity of ion beam induced epitaxial crystallization with low implantation energies applied to doped amorphous silicon layers Contributor: Skorupa, W.; Voelskow, M.; Matthäi, J. imprint: Wiley, 1987 Published in: Physica Status Solidi (a) Language: German DOI: 10.1002/pssa.2211010243 ISSN: 0031-8965; 1521-396X Keywords: Condensed Matter Physics ; Electronic, Optical and Magnetic Materials ; Condensed Matter Physics ; Electronic, Optical and Magnetic Materials Origination: Footnote: