Media type: E-Article Title: Modeling of Nitrogen High Dose Implantation into Silicon in the Energy Range of 150 to 330 keV Contributor: Sobeslavsky, E.; Skorupa, W. imprint: Wiley, 1989 Published in: Physica Status Solidi (a) Language: German DOI: 10.1002/pssa.2211140110 ISSN: 0031-8965; 1521-396X Keywords: Condensed Matter Physics ; Electronic, Optical and Magnetic Materials ; Condensed Matter Physics ; Electronic, Optical and Magnetic Materials Origination: Footnote: