Description:
<jats:title>Abstract</jats:title><jats:p>Quantization effects in the bulk galvanomagnetic properties of n‐type InSb were studied in conjucntion with the transport properties of compound semiconductor surfaces. The transverse and longitudinal magneto‐resistivity were measured at 4.2, 50, and 77°K. The former was found to increase with increasing magnetic field at all temperatures and (for a given temperature) was an order of magnitude larger than the latter which became saturated at the two higher temperatures. At 4.2°K, the electrons were weakly degenerate and the bulk mobility was determined by ionized impurity scattering. At 77°K, the electrons were non‐degenerate and the predominant scattering mechanism was probably high‐temperature optical phonon scattering.</jats:p>