• Media type: E-Article
  • Title: Differential Reflection Spectra of Heavily Doped Silicon and Germanium in the Ultraviolet Spectral Region
  • Contributor: Volfson, A. A.; Subashiev, V. K.
  • imprint: Wiley, 1969
  • Published in: physica status solidi (b)
  • Language: English
  • DOI: 10.1002/pssb.19690330112
  • ISSN: 1521-3951; 0370-1972
  • Keywords: Condensed Matter Physics ; Electronic, Optical and Magnetic Materials
  • Origination:
  • Footnote:
  • Description: <jats:title>Abstract</jats:title><jats:p>The effect of heavy doping on the reflection spectra of silicon and germanium is investigated by measuring the fractional change in reflectance, Δ<jats:italic>R</jats:italic>/<jats:italic>R</jats:italic>, between pure and doped materials. This effect arises from the narrowing of the forbidden gap in heavily doped materials. The form of the Δ<jats:italic>R</jats:italic>/<jats:italic>R</jats:italic> spectrum allows to reveal the critical points of the band structure, as in electro‐, piezo‐, or thermoreflectance measurements.</jats:p>