Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties
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Media type:
E-Article
Title:
Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties
Description:
<jats:sec><jats:label /><jats:p>Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the <jats:italic>c</jats:italic>‐axis, could be further controlled using appropriate growth temperatures and H<jats:sub>2</jats:sub>/N<jats:sub>2</jats:sub> ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.</jats:p></jats:sec>