Description:
<jats:sec><jats:label /><jats:p>A site‐ and polarity‐controlled MOVPE growth of 3D‐GaN on Si(111) substrates is established using the polarity‐dependent growth speed of GaN on an intermediate AlN layer. For hydrogenated Si or elevated AlN growth temperatures mixed‐polar growth is observed. N‐polarity could be realized on oxidized Si(111) surfaces by a reduced AlN growth temperature of <jats:italic>T</jats:italic><jats:sub>AlN</jats:sub> = 930 °C. Specific Si crystal facets (e.g., {100}, {11<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssb201700485-math-0004.png" xlink:title="urn:x-wiley:14381656:media:pssb201700485:pssb201700485-math-0004" />}) are determined as starting points for metal‐polar growth of AlN. By site‐controlled etching in Si, we intentionally expose these additional crystal facets prior to epitaxy to obtain defined starting points for metal‐polar growth. At <jats:italic>T</jats:italic><jats:sub>AlN</jats:sub> = 930 °C, this leads to a site‐controlled growth of metal‐polar GaN, surrounded by N‐polar AlN on Si(111). Thus both, a polarity‐ and site‐controlled epitaxial growth of 3D‐GaN is achieved. The new developed method has been applied to a large variety of structure sizes from 650 nm to 1 mm. The results are supported by a schematic model, explaining the influence of surface termination, in situ desorption, and growth conditions. This paves the way to the development of future 3D‐opto‐electronic devices, directly established on Si.</jats:p></jats:sec>