Description:
AbstractDislocations in a crystal have a great influence on the states of electrons and phonons. As to electrons the effect of the dislocations is especially noticeable in semiconductors where the number of charge carriers normally is very small. The aim of the present paper is to find the potentials which describe the interaction between electrons and the strain field of a 60° dislocation in germanium. These potentials give rise to bound states with localized electrons.