Description:
<jats:title>Abstract</jats:title><jats:p>Ion implanted silicon with two types of impurities is studied using Raman scattering. The splitting of the localized modes into two pair modes is observed. In the case of <jats:sup>10</jats:sup>B<jats:sup>31</jats:sup>P pairs the two modes are ω ∥ = 650 cm<jats:sup>−1</jats:sup>, ω ⊥ = 620 cm<jats:sup>−1</jats:sup>, and for <jats:sup>11</jats:sup>B<jats:sup>31</jats:sup>P pairs, ω ∥ = 628 cm<jats:sup>−1</jats:sup>, ω ⊥ = 605 cm<jats:sup>−1</jats:sup>. Results for BAs pairs in silicon are also reported. It is believed that for the first time the second order Raman scattering by pair modes is observed. The second order spectrum gives information about the density of states of these modes.</jats:p>