Description:
<jats:title>Abstract</jats:title><jats:p>A modified Thomas‐Fermi method for the calculation of the electronic structure of accumulation layers in MIS‐systems is presented which in spite of the simplicity of a “classical” method yields results in good agreement with extensive self‐consistent quantum mechanical calculations. It is shown that the modified Thomas‐Fermi method is suitable to describe the characteristics of bound and mobile carriers in accumulation layers. The method is used to calculate accumulation layers in n‐ and p‐type GaAs and to discuss the influence of the quantum effects at the interface on the dependence of the total charge in the accumulation layer on the surface band bending. Comparison is made with the classical results.</jats:p>