Description:
<jats:title>Abstract</jats:title><jats:p>Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of ternary glassy alloys As<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub>:Sn<jats:sub><jats:italic>x</jats:italic></jats:sub> (<jats:italic>x</jats:italic> = 0 to 3.5 at%) and (1−<jats:italic>y</jats:italic>)(As<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub>):<jats:italic>y</jats:italic>(Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub>) (<jats:italic>y</jats:italic> = 0 to 0.55) by the time‐of‐flight technique. In the frame of a multiple‐trapping model it is shown that by adding tin and Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> to the glass formers As<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> and As<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> respectively, the hole drift mobility is strongly increased (up to 200 times), while small amounts of tin (about 1 at%) hamper the recombination. Optical bias causes the drift mobility to increase many times with its activation energy being decreased. The obtained results indicate the variation in occupation of deep localized centres and explain the known effect of photosensitivity enhancement when ternary chalcogenide glassy alloys are used in layer structures for optical information storage.</jats:p>