Evidence of the Conduction–Valence Band Overlap Induced by a Magnetic Field in Zero‐Gap Hg1–xMnxTe

Media type: E-Article
Title: Evidence of the Conduction–Valence Band Overlap Induced by a Magnetic Field in Zero‐Gap Hg1–xMnxTe
Contributor: Sandauer, A. M.; Byszewski, P.
imprint: Wiley, 1982
Published in: physica status solidi (b)
Language: English
DOI: 10.1002/pssb.2221090118
ISSN: 0370-1972; 1521-3951
Keywords: Condensed Matter Physics ; Electronic, Optical and Magnetic Materials
Origination:
Footnote:
Description: <jats:title>Abstract</jats:title><jats:p>Experimental evidence and theoretical results are given of the conduction–valence bands overlap induced by an exchange interaction in zero‐gap Hg<jats:sub>1–<jats:italic>x</jats:italic></jats:sub>Mn<jats:sub><jats:italic>x</jats:italic></jats:sub>Te. The Fermi level as well as the concentration of electrons and holes strongly depend on the magnetic field in the region where the overlap exists.</jats:p>

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