• Media type: E-Article
  • Title: Measurements of Proton Channeling Energy Losses in Silicon in the Intermediate Energy Region
  • Contributor: Gehrmann, P.; Lenkeit, K.; Stolle, R.
  • Published: Wiley, 1985
  • Published in: physica status solidi (b), 131 (1985) 2, Seite 519-526
  • Language: English
  • DOI: 10.1002/pssb.2221310213
  • ISSN: 0370-1972; 1521-3951
  • Keywords: Condensed Matter Physics ; Electronic, Optical and Magnetic Materials
  • Origination:
  • Footnote:
  • Description: AbstractThe energy loss of protons in the energy region from 40 to 350 keV is measured for (110), (100), and (111) planar channeling, for 〈110〉, 〈111〉, 〈112〉 axial channeling, and for random directions in silicon. The investigations are carried out by means of the transmission experiment using silicon targets of several thicknesses. Stopping power values are derived from the peak and the leading edge of energy spectra for channeled particles. Special procedures are applied to correct the obtained stopping power data with respect to the target thickness. In the case of leading edge the stopping power data depend strongly on the target thickness. It is shown that only the extrapolation to zero thickness leads to correct stopping power values for best channeled particles. It is found that the ratio of channeled to random stopping power shows a maximum in the energy region at about 70 keV. Here the stopping power for channeling and random directions reach their largest value, too.