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Crespo, A.; Bellott, M.; Chabak, K.; Gillespie, J. K.; Jessen, G. H.; Kossler, M.; Trimble, V.; Trejo, M.; Via, G. D.; Winningham, B.; Smith, H. E.; Walker, D.; Cooper, T.; Gao, X.; Guo, S.

High frequency performance of Ga free barrier AlInN/GaN HEMT

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  • Media type: E-Article
  • Title: High frequency performance of Ga free barrier AlInN/GaN HEMT
  • Contributor: Crespo, A.; Bellott, M.; Chabak, K.; Gillespie, J. K.; Jessen, G. H.; Kossler, M.; Trimble, V.; Trejo, M.; Via, G. D.; Winningham, B.; Smith, H. E.; Walker, D.; Cooper, T.; Gao, X.; Guo, S.
  • imprint: Wiley, 2010
  • Published in: physica status solidi c
  • Language: English
  • DOI: 10.1002/pssc.200983886
  • ISSN: 1862-6351; 1610-1642
  • Keywords: Condensed Matter Physics
  • Origination:
  • Footnote:
  • Description: <jats:title>Abstract</jats:title><jats:p>In this work we present the highest frequency performance reported to date of an AlInN/GaN HEMT with a 2×150 μm configuration. The frequency performance reached was of a measured f<jats:sub>T</jats:sub> of 107 GHz and an f<jats:sub>max</jats:sub> of 89.5 GHz. The device has an I<jats:sub>DSS</jats:sub> of 1.1 A/mm at a V<jats:sub>GS</jats:sub> of 0 V, an I<jats:sub>max</jats:sub> of 1.3 A/mm at V<jats:sub>GS</jats:sub> of 1 V, and a g<jats:sub>m‐peak</jats:sub> of 395 mS/mm. The gate length, L<jats:sub>G</jats:sub>, was 122 nm and a total barrier thickness, t<jats:sub>bar</jats:sub>, of 10.1 nm. This gives us an L<jats:sub>G</jats:sub>/t<jats:sub>bar</jats:sub> ratio of 12.1 with a high f<jats:sub>t</jats:sub>·L<jats:sub>G</jats:sub> product of 13 GHz·μm. The thin barrier thickness greatly contributed to the high frequency performance of the device by reducing the short channel effects. The contact resistance of a TLM structure next to the tested device is 0.42 Ω·mm. The epitaxial layer was grown by MOCVD on a 3” SiC substrate. Hall measurements, after passivation, revealed an average material sheet resistance, R<jats:sub>sheet</jats:sub>, of 219 Ω/□, a sheet carrier concentration of 2.2×10<jats:sup>13</jats:sup>cm<jats:sup>‐2</jats:sup>, and a mobility of 1320 cm<jats:sup>2</jats:sup>/V‐s. (© 2010 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</jats:p>