Media type: E-Article Title: Contact passivation in silicon solar cells using atomic‐layer‐deposited aluminum oxide layers Contributor: Zielke, Dimitri; Petermann, Jan Hendrik; Werner, Florian; Veith, Boris; Brendel, Rolf; Schmidt, Jan imprint: Wiley, 2011 Published in: physica status solidi (RRL) – Rapid Research Letters Language: English DOI: 10.1002/pssr.201105285 ISSN: 1862-6254; 1862-6270 Keywords: Condensed Matter Physics ; General Materials Science Origination: Footnote: Description: <jats:title>Abstract</jats:title><jats:p>Atomic‐layer‐deposited aluminum oxide (AlO<jats:sub><jats:italic>x</jats:italic></jats:sub>) layers are implemented between the phosphorous‐diffused n<jats:sup>+</jats:sup>‐emitter and the Al contact of passivated emitter and rear silicon solar cells. The increase in open‐circuit voltage <jats:italic>V</jats:italic><jats:sub>oc</jats:sub> of 12 mV for solar cells with the Al/AlO<jats:sub><jats:italic>x</jats:italic></jats:sub>/n<jats:sup>+</jats:sup>‐Si tunnel contact compared to contacts without AlO<jats:sub><jats:italic>x</jats:italic></jats:sub> layer indicates contact passivation by the implemented AlO<jats:sub><jats:italic>x</jats:italic></jats:sub>. For the optimal AlO<jats:sub><jats:italic>x</jats:italic></jats:sub> layer thickness of 0.24 nm we achieve an independently confirmed energy conversion efficiency of 21.7% and a <jats:italic>V</jats:italic><jats:sub>oc</jats:sub> of 673 mV. For AlO<jats:sub><jats:italic>x</jats:italic></jats:sub> thicknesses larger than 0.24 nm the tunnel probability decreases, resulting in a larger series resistance. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>