Media type: E-Article Title: Ge(100) surfaces prepared in vapor phase epitaxy process ambient Contributor: Brückner, Sebastian; Barrigón, Enrique; Supplie, Oliver; Kleinschmidt, Peter; Dobrich, Anja; Löbbel, Claas; Rey‐Stolle, Ignacio; Döscher, Henning; Hannappel, Thomas imprint: Wiley, 2012 Published in: physica status solidi (RRL) – Rapid Research Letters Language: English DOI: 10.1002/pssr.201206028 ISSN: 1862-6254; 1862-6270 Keywords: Condensed Matter Physics ; General Materials Science Origination: Footnote: Description: <jats:title>Abstract</jats:title><jats:p>Ge(100) substrates essential for subsequent III–V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. We confirmed thermal oxide and carbon removal by X‐ray photoelectron spectroscopy, characterized the (2 × 1)/(1 × 2) surface reconstruction by low energy electron diffraction, and employed reflection anisotropy spectroscopy for optical in situ analysis. Our Ge(100) spectra de‐ viate from reference data of clean surfaces prepared in ultra‐high vacuum, most probably due to the presence of hydrogen bonds. The observation was correlated with Fourier‐transform infrared spectroscopy showing coupled H–Ge–Ge–H stretch modes associated with a monohydride termination of the Ge(100) surface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>