Description:
<jats:title>Abstract</jats:title><jats:p><jats:bold>Summary:</jats:bold> We manufactured for the first time MIS capacitors based on aluminium nitride (AlN) thin films synthesized by Pulsed Laser Deposition (PLD). AlN films were deposited on Si substrates by PLD from AlN targets in nitrogen ambient by multi‐pulse ablation using a UV KrF excimer laser source (<jats:italic>λ</jats:italic> = 248 nm, <jats:italic>τ</jats:italic> = 7 ns). The structures we prepared were electrically characterized by C‐V and I‐V complementary measurements. Our studies evidence the formation of good interfaces, and of defects into the film bulk which are electrically active. This justifies further developments in view of future applications of PLD synthesized AlN thin films as a dielectric alternatives to SiO<jats:sub>2</jats:sub>.</jats:p><jats:p><jats:boxed-text content-type="graphic" position="anchor"><jats:caption><jats:p>The distribution of the interface trap densities (<jats:italic>D<jats:sub>it</jats:sub></jats:italic>) in Si bandgap for AlN/Si structures synthesized at different N<jats:sub>2</jats:sub> pressures.</jats:p></jats:caption><jats:graphic xmlns:xlink="http://www.w3.org/1999/xlink" position="anchor" xlink:href="urn:x-wiley:16128850:media:PPAP200500123:gra001"><jats:alt-text>image</jats:alt-text><jats:caption><jats:p>The distribution of the interface trap densities (<jats:italic>D<jats:sub>it</jats:sub></jats:italic>) in Si bandgap for AlN/Si structures synthesized at different N<jats:sub>2</jats:sub> pressures.</jats:p></jats:caption></jats:graphic></jats:boxed-text>
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