Description:
<jats:sec><jats:label /><jats:p>A doping technique for p‐type poly‐Si/SiOx passivating contacts using a spin‐on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV<jats:sub>oc</jats:sub>, contact resistivity <jats:italic>ρ</jats:italic><jats:sub>c</jats:sub>) are investigated. For all as‐annealed samples at different drive‐in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV<jats:sub>oc</jats:sub> (from ∼680 to ∼610 mV) and increment in <jats:italic>ρ</jats:italic><jats:sub>c</jats:sub> (from ∼3 to ∼800 mΩ cm<jats:sup>2</jats:sup>). After a hydrogenation treatment by depositing a SiN<jats:sub>x</jats:sub>/AlO<jats:sub>x</jats:sub> stack followed by forming gas annealing, all samples show improved iVoc (∼700 mV with Ga‐B co‐doped, and ∼720 mV with all Ga). Interestingly, when co‐doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary‐ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically‐active Ga and B in the poly‐Si and Si layers. These results help understand the different features of the two dopants: a low <jats:italic>ρ</jats:italic><jats:sub>c</jats:sub> with B, a good passivation with Ga, their degree of activation inside the poly‐Si and Si layers, and the annealing effects.</jats:p></jats:sec>