Description:
AbstractMoS2, one of the most valued 2D materials beyond graphene, shows potential for future applications in postsilicon digital electronics and optoelectronics. However, achieving hole transport in MoS2, which is dominated by electron transport, is always a challenge. Here, MoS2 transistors gated by electrolyte gel exhibit the characteristics of hole and electron transport, a high on/off ratio over 105, and a low subthreshold swing below 50 mV per decade. Due to the electrolyte gel, the density of electrons and holes in the MoS2 channel reaches ≈9 × 1013 and 8.85 × 1013 cm−2, respectively. The electrolyte gel‐assisted MoS2 phototransistor exhibits adjustable positive and negative photoconductive effects. Additionally, the MoS2 p–n homojunction diode affected by electrolyte gel shows high performance and a rectification ratio over 107. These results demonstrate that modifying the conductance of MoS2 through electrolyte gel has great potential in highly integrated electronics and optoelectronic photodetectors.