Media type: E-Article Title: MOSFET scaling into the 10 nm regime Contributor: Chang, Leland; Hu, Chenming imprint: Elsevier BV, 2000 Published in: Superlattices and Microstructures Language: English DOI: 10.1006/spmi.2000.0933 ISSN: 0749-6036 Keywords: Electrical and Electronic Engineering ; Condensed Matter Physics ; General Materials Science Origination: Footnote: