Media type: E-Article Title: Dependence of the chemical etch rate and etch time of silicon on the post-implanted diffusion depth: application for membrane achievement Contributor: Gaiseanu, F.; Cobianu, C.; Dascalu, D. imprint: Springer Science and Business Media LLC, 1993 Published in: Journal of Materials Science Letters Language: English DOI: 10.1007/bf00627041 ISSN: 0261-8028; 1573-4811 Origination: Footnote: