Media type: E-Article Title: Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with Al2O3/TiO2 gate oxides prepared by atomic layer deposition Contributor: Yen, Chih-Feng; Lee, Ming-Kwei Published: Elsevier BV, 2014 Published in: Solid-State Electronics, 100 (2014), Seite 1-6 Language: English DOI: 10.1016/j.sse.2014.06.026 ISSN: 0038-1101 Keywords: Materials Chemistry ; Electrical and Electronic Engineering ; Condensed Matter Physics ; Electronic, Optical and Magnetic Materials Origination: Footnote: