Media type: E-Article Title: Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD Contributor: Lee, Jeong-Soo; Ahn, Kwang-Ho; Jeong, Yoon-Ha; Kim, Dae M. imprint: Elsevier BV, 1996 Published in: Sensors and Actuators A: Physical Language: English DOI: 10.1016/s0924-4247(97)80112-4 ISSN: 0924-4247 Keywords: Electrical and Electronic Engineering ; Metals and Alloys ; Surfaces, Coatings and Films ; Condensed Matter Physics ; Instrumentation ; Electronic, Optical and Magnetic Materials Origination: Footnote: