Published in:
Nanoscale, 10 (2018) 47, Seite 22362-22373
Language:
English
DOI:
10.1039/c8nr07973k
ISSN:
2040-3364;
2040-3372
Origination:
Footnote:
Description:
Charge separation at a semiconductor nano-heterointerface is switched between an on and an off state based on a combination of lattice strain, coulomb interaction, and interface trap states.