> Details

Sleziona, Stephan; Pelella, Aniello; Faella, Enver; Kharsah, Osamah; Skopinski, Lucia; Maas, André; Liebsch, Yossarian; Schmeink, Jennifer; Di Bartolomeo, Antonio; Schleberger, Marika

Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation

Reference
management

Bookmarks

Remove from
bookmarks

Share this on Whatsapp

Close

Bookmarks



You can manage bookmarks using lists, please log in to your user account for this.
  • Media type: E-Article
  • Title: Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation
  • Contributor: Sleziona, Stephan; Pelella, Aniello; Faella, Enver; Kharsah, Osamah; Skopinski, Lucia; Maas, André; Liebsch, Yossarian; Schmeink, Jennifer; Di Bartolomeo, Antonio; Schleberger, Marika
  • imprint: Royal Society of Chemistry (RSC), 2023
  • Published in: Nanoscale Advances
  • Language: English
  • DOI: 10.1039/d3na00543g
  • ISSN: 2516-0230
  • Origination:
  • Footnote:
  • Description: <jats:p>Field-effect transistors based on molybdenum disulfide (MoS<jats:sub>2</jats:sub>) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. Ion irradiation is used to manipulate the hysteresis.</jats:p>
  • Access State: Open Access