• Media type: E-Article
  • Title: A systematic study of Ga- and N-polar GaN nanowire–shell growth by metal organic vapor phase epitaxy
  • Contributor: Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Jansen, Dennis; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
  • imprint: Royal Society of Chemistry (RSC), 2020
  • Published in: CrystEngComm
  • Language: English
  • DOI: 10.1039/d0ce00693a
  • ISSN: 1466-8033
  • Origination:
  • Footnote:
  • Description: <p>N-polar and Ga-polar (0001) GaN core–shell wires detached from an AlN/Si(111) growth template. Different facets have been identified, limiting the vertical shell growth extension, modelled by varying surface terminations and different H-passivation.</p>