Description:
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This paper describes the results of the first attempt to reduce misfit dislocations in epilayers of a wide-band-gap II-VI semiconductor on GaAs substrates by utilizing the ZnSe-ZnS strained-layer superlattice (SLS) structure. From a theoretical calculation, SLSs consisting of a 200 Å-ZnSe and a 10 Å-ZnS layer in one period can be grown as lattice-matched SLSs to GaAs. It has been found from the photoluminescence measurements and electron-beam-induced current (EBIC) image observations that the generation of misfit dislocations can be markedly reduced, as expected.
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