Description:
<jats:p>
We demonstrated that boron penetration through gate oxides is more significant in a
SiO<jats:sub>2</jats:sub> chemical vapor deposition ambient than in a N<jats:sub>2</jats:sub> ambient. By systematically
evaluating hydrogen concentration dependence on boron diffusivity in gate dielectrics,
we determined that enhanced boron diffusion through gate oxides was attributable to
hydrogen in the SiO<jats:sub>2</jats:sub> chemical vapor deposition source gas.
</jats:p>