Description:
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We have successfully demonstrated that a solution of Kusatsu Spa water (KSW)/H<jats:sub>2</jats:sub>O<jats:sub>2</jats:sub> etches (100)GaAs wafers. This etchant system provides high-quality etched surfaces without any undesirable roughness or etch pits. The etching rate was found to be easily controlled by changing the etchant component proportions. The etchant system has reproducible etching rates and does not erode photoresist masks.
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