Deutsch, Todd G;
Young, James L.;
Döscher, Henning;
Steiner, Myles;
Turner, John A
Inverted Metamorphic Multijunction Semiconductors for Exceptionally High Photoelectrolysis Efficiencies: Materials Development and Measurement Challenges
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Media type:
E-Article
Title:
Inverted Metamorphic Multijunction Semiconductors for Exceptionally High Photoelectrolysis Efficiencies: Materials Development and Measurement Challenges
Contributor:
Deutsch, Todd G;
Young, James L.;
Döscher, Henning;
Steiner, Myles;
Turner, John A
imprint:
The Electrochemical Society, 2016
Published in:
ECS Meeting Abstracts, MA2016-02 (2016) 49, Seite 3712-3712
Description:
<jats:p>In order to economically generate renewable hydrogen fuel from solar energy using semiconductor-based devices, the U.S. Department of Energy Fuel Cells Technology Office has established technical targets of over 20% solar-to-hydrogen (STH) efficiency with several thousand hours of stability under operating conditions. Our goal is to improve STH efficiency from just over 10% to over 20% via novel tandem semiconductor materials and configurations. Our primary focus is to develop inverted metamorphic multijunction (IMM) III-V semiconductors that have bandgaps optimized for water splitting. The IMM devices are grown by metal organic chemical vapor deposition using a GaAs substrate and use a transparent step-graded buffer layer to allow off-lattice growth. We used IMM growth to achieve a high-quality, lattice-mismatched lower bandgap (1.2 eV) InGaAs bottom cell that captures a larger fraction of the solar spectrum. This 1.8/1.2 eV bandgap combination of the GaInP<jats:sub>2</jats:sub>/InGaAs configuration is able to generate higher photocurrents, and thus efficiencies, than the 1.8/1.4 eV bandgap combination of the lattice-matched GaInP<jats:sub>2</jats:sub>/GaAs configuration. </jats:p>
<jats:p>We will also discuss measurement challenges in appraising solar-to-hydrogen efficiency, some of which are specific to tandem absorbers. We have recently discovered several systematic errors in measurements made by our group and others that consistently overrate efficiency. Using more stringent measurement standards, we have confirmed over 15% STH on our most advanced IMM devices. Our focus in the next year will be on photon management strategies at the semiconductor/electrolyte interface. Capturing a significant portion of the ~25% of photons lost to reflection at this interface should allow the realization of devices that exceed 20% STH efficiency.</jats:p>