Description:
<jats:p> This article presents multifunctional behaviors of a Pb<jats:sub>0.97</jats:sub>La<jats:sub>0.03</jats:sub>(Zr<jats:sub>0.52</jats:sub>Ti<jats:sub>0.48</jats:sub>)O<jats:sub>3</jats:sub> (3/52/48) wafer subjected to ultraviolet light illumination with a focus on its photoresistive effects. When this PLZT wafer that is spurted with indium tin oxide electrodes and then polarized through thickness is illuminated by ultraviolet light, its resistance increases rather than decreases as observed in conventional photoresistors made of semiconductors. Giant negative voltage and resistance are detected when light is switched off. The bending deformation caused by the photovoltaic and converse piezoelectric effects is examined and the photoinduced electrical field strength is further investigated. The electrical fields in light on–off states are studied. Hysteresis and memristive features of the indium tin oxide/PbLa(ZrTi)O<jats:sub>3</jats:sub>/indium tin oxide (ITO/PLZT/ITO) sample under repetitive light on–off operations are investigated. </jats:p>