Media type: E-Article Title: Improved breakdown for SOI MOSFETs fabricated in electron-beam recrystallized polysilicon Contributor: Hobbs, L.; Mathewson, A.; Lane, W.A. Published: Institute of Electrical and Electronics Engineers (IEEE), 1988 Published in: IEEE Electron Device Letters, 9 (1988) 8, Seite 385-387 Language: Not determined DOI: 10.1109/55.752 ISSN: 0741-3106; 1558-0563 Keywords: Electrical and Electronic Engineering ; Electronic, Optical and Magnetic Materials Origination: Footnote: