Media type: E-Article Title: MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics Contributor: Campbell, S.A.; Gilmer, D.C.; Xiao-Chuan Wang; Ming-Ta Hsieh; Hyeon-Seag Kim; Gladfelter, W.L.; Jinhua Yan imprint: Institute of Electrical and Electronics Engineers (IEEE), 1997 Published in: IEEE Transactions on Electron Devices Language: Not determined DOI: 10.1109/16.554800 ISSN: 0018-9383 Keywords: Electrical and Electronic Engineering ; Electronic, Optical and Magnetic Materials Origination: Footnote: