Media type: E-Article Title: Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs Contributor: Poggi, Antonella; Moscatelli, Francesco; Solmi, Sandro; Nipoti, Roberta imprint: Institute of Electrical and Electronics Engineers (IEEE), 2008 Published in: IEEE Transactions on Electron Devices Language: Not determined DOI: 10.1109/ted.2008.926640 ISSN: 0018-9383 Keywords: Electrical and Electronic Engineering ; Electronic, Optical and Magnetic Materials Origination: Footnote: