Media type: E-Article Title: High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Contributor: Linfeng Lan; Junbiao Peng Published: Institute of Electrical and Electronics Engineers (IEEE), 2011 Published in: IEEE Transactions on Electron Devices, 58 (2011) 5, Seite 1452-1455 Language: Not determined DOI: 10.1109/ted.2011.2115248 ISSN: 0018-9383; 1557-9646 Origination: Footnote: