Media type: E-Article Title: Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays Contributor: Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Beltrami, Silvia imprint: Institute of Electrical and Electronics Engineers (IEEE), 2021 Published in: IEEE Transactions on Nuclear Science Language: Not determined DOI: 10.1109/tns.2020.3047710 ISSN: 0018-9499; 1558-1578 Keywords: Electrical and Electronic Engineering ; Nuclear Energy and Engineering ; Nuclear and High Energy Physics Origination: Footnote: